JPS6317229B2 - - Google Patents

Info

Publication number
JPS6317229B2
JPS6317229B2 JP55041750A JP4175080A JPS6317229B2 JP S6317229 B2 JPS6317229 B2 JP S6317229B2 JP 55041750 A JP55041750 A JP 55041750A JP 4175080 A JP4175080 A JP 4175080A JP S6317229 B2 JPS6317229 B2 JP S6317229B2
Authority
JP
Japan
Prior art keywords
layer
electrodes
electrode
polysilicon
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55041750A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56138951A (en
Inventor
Akira Takei
Takashi Mitsuida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4175080A priority Critical patent/JPS56138951A/ja
Publication of JPS56138951A publication Critical patent/JPS56138951A/ja
Publication of JPS6317229B2 publication Critical patent/JPS6317229B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP4175080A 1980-03-31 1980-03-31 Manufacture of semiconductor memory device Granted JPS56138951A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4175080A JPS56138951A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4175080A JPS56138951A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS56138951A JPS56138951A (en) 1981-10-29
JPS6317229B2 true JPS6317229B2 (en]) 1988-04-13

Family

ID=12617090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4175080A Granted JPS56138951A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS56138951A (en])

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6378960A (ja) * 1986-09-22 1988-04-09 日本ゼオン株式会社 防音床材
JPS6378961A (ja) * 1986-09-22 1988-04-09 日本ゼオン株式会社 制振複合床材
JPH0272733U (en]) * 1988-11-25 1990-06-04
JPH02105438U (en]) * 1989-02-10 1990-08-22

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275190A (en) * 1975-12-18 1977-06-23 Toshiba Corp Production of 4-phase drive charge coupling device
US4097885A (en) * 1976-10-15 1978-06-27 Fairchild Camera And Instrument Corp. Compact, two-phase charge-coupled-device structure utilizing multiple layers of conductive material

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6378960A (ja) * 1986-09-22 1988-04-09 日本ゼオン株式会社 防音床材
JPS6378961A (ja) * 1986-09-22 1988-04-09 日本ゼオン株式会社 制振複合床材
JPH0272733U (en]) * 1988-11-25 1990-06-04
JPH02105438U (en]) * 1989-02-10 1990-08-22

Also Published As

Publication number Publication date
JPS56138951A (en) 1981-10-29

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